Impact of Deposition Temperature on Crystal Structure and Ferroelectric Properties of (Al 1− x Sc x )N Films Prepared by Sputtering Method
نویسندگان
چکیده
Switchable Ferroelectric (Al1−xScx)N Films In article number 2100302 by Hiroshi Funakubo and co-workers, the deposition temperature dependence of crystal structure ferroelectricity for Sc-doped AlN [(Al0.78Sc0.22)N] films is investigated. The background cover image XRD 2θ-Ψ mapping AlScN films. Two structures show polarization switching models AlScN. P-E hysteresis response ascertained deposited without heating substrates.
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architecture and engineering of nanoscale sculptured thin films and determination of their properties
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ژورنال
عنوان ژورنال: Physica Status Solidi A-applications and Materials Science
سال: 2021
ISSN: ['1862-6300', '1862-6319']
DOI: https://doi.org/10.1002/pssa.202170049